APT100GT120JU2 APT100GT120JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 1 ? 7 isotop absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v i c1 t c = 25c 140 i c2 continuous collector current t c = 80c 100 i cm pulsed collector current t c = 25c 280 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 480 w if av maximum average forward current duty cycle=0.5 t c = 80c 27 if rms rms forward current (square wave, 50% duty) 34 a these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. k e c g v ces = 1200v i c = 100a @ tc = 80c application ac and dc motor control switched mode power supplies power factor correction brake switch features trench + field stop igbt ? technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated isotop ? package (sot-227) very low stray inductance high level of integration benefits low conduction losses stable temperature behavior very rugged direct mounting to heatsink (isolated package) low junction to case thermal resistance easy paralleling due to positive tc of vcesat isotop ? boost chopper trench igbt k c g e
APT100GT120JU2 APT100GT120JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 2 ? 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 5ma 1200 v i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 5 ma t j = 25c 1.4 1.7 2.1 v ce(on) collector emitter on voltage v ge =15v i c = 100a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 4ma 5.0 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 7200 c oes output capacitance 400 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 300 pf t d(on) turn-on delay time 260 t r rise time 30 t d(off) turn-off delay time 420 t f fall time resistive switching (25c) v ge = 15v v bus = 600v i c = 100a r g = 3.9 70 ns t d(on) turn-on delay time 290 t r rise time 45 t d(off) turn-off delay time 520 t f fall time 90 ns e on turn-on switching energy 10 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 600v i c = 100a r g = 3.9 12 mj
APT100GT120JU2 APT100GT120JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 3 ? 7 diode ratings and characteristics symbol characteristic test conditions min typ max unit i f = 30a 2.0 2.5 i f = 60a 2.3 v f diode forward voltage i f = 30a t j = 125c 1.8 v v r = 1200v t j = 25c 250 i rm maximum reverse leakage current v r = 1200v t j = 125c 500 a c t junction capacitance v r = 200v 32 pf reverse recovery time i f =1a,v r =30v di/dt =100a/s t j = 25c 31 t j = 25c 370 t rr reverse recovery time t j = 125c 500 ns t j = 25c 5 i rrm maximum reverse recovery current t j = 125c 12 a t j = 25c 660 q rr reverse recovery charge i f = 30a v r = 800v di/dt =200a/s t j = 125c 3450 nc t rr reverse recovery time 220 ns q rr reverse recovery charge 4650 nc i rrm maximum reverse recovery current i f = 30a v r = 800v di/dt =1000a/s t j = 125c 37 a thermal and package characteristics symbol characteristic min typ max unit igbt 0.26 r thjc junction to case diode 1.1 r thja junction to ambient (igbt & diode) 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -55 150 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g typical igbt performance curve 0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 120 140 i c (a) fmax, operating frequency (khz) v ce =600v d=50 % r g =3.9 ? t j =125c operating frequency vs collector current
APT100GT120JU2 APT100GT120JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 4 ? 7 output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 200 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 50 100 150 200 01234 v ce (a) i c (a) t j = 125c transfert characteristics t j =25c t j =125c 0 50 100 150 200 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 5 10 15 20 25 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 600v v ge = 15v r g = 3.9 ? t j = 125c eon eoff 0 5 10 15 20 25 0 5 10 15 20 25 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 100a t j = 125c switching energy losses vs gate resistance reverse safe operating area 0 40 80 120 160 200 240 0 400 800 1200 1600 v ce (v) i c (a) v ge =15v t j =125c r g =3.9 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w)
APT100GT120JU2 APT100GT120JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 5 ? 7 typical diode performance curve
APT100GT120JU2 APT100GT120JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 6 ? 7
APT100GT120JU2 APT100GT120JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 7 ? 7 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) emitter terminals are shorted internally. current handling capability is equal for either emitter terminal. isotop ? is a registered trademark of sgs thomson apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved. emitter gate collector cathode
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